Power chip

3A, 2.2V to 5.5V Input, Ceramic Cap Version, Non-Isolated, Wide Output, Adjustable Power Module with TurboTrans Technology 10-Through-Hole Module -40 to 85

The NCP51705 driver is mainly used to drive SiC MOSFET transistors. To achieve the lowest conduction losses, the driver is capable of delivering the maximum gate voltage to the SiC MOSFET device. Switching losses are also minimized by providing high peak currents during turn-on and turn-off. For improved reliability, dV/dt immunity and even faster turn-off time, the NCP51705 can use an on-board charge pump to generate a user-selectable negative voltage rail. For isolation applications, the NCP51705 also provides an externally accessible 5 V rail to power the auxiliary side of digital or high-speed opto-isolators.

3A, 2A or 1A Half Bridge Gate Driver 8-SOIC -40 to 125 with 8V UVLO and TTL Input