Triode/MOS tube/transistor/module
NPN, Vceo=50V, Ic=150mA, hfe=120~240
Descripción
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CBI (Creation Foundation)
Fabricantes
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
P channel, -12V -4.3A
Descripción
Voltage VDSS650V, conduction resistance Rds2.8 ohms, charge Qg25nC, current ID4A
Descripción
N-Channel-MOS-FetPMV30UN2R
Descripción
Infineon (Infineon)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes