Triode/MOS tube/transistor/module

N+P channel, 30V, 7A, 25mΩ@10V

P-channel, -30V, -61A

PNP, Vceo=-300V, Ic=-500mA, hfe=25~

Type NPN IC(A) 0.6 VCBO(V) 180 VCEO(V) 160 VEBO(V) 6 VCE(sat)(V) 0.2

P-channel, -30V, -5.3A, 50mΩ@-10V

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining advances in silicon and Dual Cool™ encapsulation technology provide the lowest rDS(on) while maintaining excellent switching performance with extremely low junction-to-ambient thermal resistance.

P-channel, -200V, -12A, 500mΩ@-10V

NOMS 20V 750mA RDS(on)=300mΩ WITH ESD SOT-323

PNP, 25V, 5A