Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This device includes two custom N-channel MOSFETs in a dual Power 33 (3mm X 3mm MLP) encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and sync MOSFET (Q2) provide the best power efficiency.
Descripción
APM (Jonway Microelectronics)
Fabricantes
Littelfuse (American Littelfuse)
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Wuxi Unisplendour
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BLUE ROCKET (blue arrow)
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DIODES (US and Taiwan)
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PNP, Vceo=-65V, Ic=-100mA
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 85 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 4.5/5 Continuous Drain Current ID (A) 135
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
The MJL3281A and MJL1302A power transistors are suitable for high-power audio, disk head positioners, and other linear applications.
Descripción
KY (Han Kyung Won)
Fabricantes
30A Standard SCRs IT(RMS):30A VGT: 1.5V VDRM VRRM:1600V TJ:-40-125℃
Descripción
FOSAN (Fuxin)
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Field Effect Transistor (MOSFET) N+N Ditch VDSS:30V ID:8A
Descripción
YANGJIE (Yang Jie)
Fabricantes
YJG20N06A-F1-0100HF
Descripción
VBsemi (Wei Bi)
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 10.5/14 Continuous Drain Current ID (A) 12
Descripción