Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
KODENSHI AUK (Photonics)
Fabricantes
TI (Texas Instruments)
Fabricantes
High Voltage High Current Darlington Transistor Array 16-SOIC 0 to 70
Descripción
N-channel 30V 10.5A
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N-channel, VDSS withstand voltage 20V, ID current 0.8A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.5-1.0V,
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 600V, 4A, 2Ω@10V
Descripción
YW (You Wang)
Fabricantes
ST (STMicroelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
Ascend (Ansend)
Fabricantes
N-channel, 600V, 2A, 5Ω@10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
IC(A) 1 VCEO(V) 80 hFE(β) 63-250 fT(MHZ) 130 VCBO(V) 100 VCE(sat)(W) 0.5 Type NPN
Descripción
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TMC (Taiwan Mao)
Fabricantes
DIODES (US and Taiwan)
Fabricantes