Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 10.8A, 299mΩ@10V
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 200mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@10mA, 1V PNP,Vceo=- 40V,Ic=-0.2A
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
ST (STMicroelectronics)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
Wayon (Shanghai Wei'an)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 100V, 57A, 23mΩ@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, Vce=600V, Ic=40A, Vce(on)=1.72V
Descripción
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 250V, 100mA, 14Ω@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes