Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
KY (Han Kyung Won)
Fabricantes
SHIKUES (Shike)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 250V 57A
Descripción
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
minos (Minos)
Fabricantes
Dual N-channel, common drain. 20V, 6A, 25mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 200V, 9.1A, 80mΩ@10V
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
VISHAY (Vishay)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel 600V 4A
Descripción
AGM-Semi (core control source)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 5.0A Power (Pd): 3.1W On-Resistance (RDS(on)@Vgs,Id): 100mΩ@10V,4A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 3.57nC@10V Input Capacitance (Ciss@Vds): 0.182nF@50V , Vds=100V Id=5.0A Rds=100mΩ ,Working temperature: -55℃~+150℃@(Tj)
Descripción
KODENSHI AUK (Photonics)
Fabricantes
N-channel, 600V, 4A, 2.5Ω@10V
Descripción