Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=100V, Ic=5A
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.
Descripción
PSI (Baolixin)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
onsemi (Ansemi)
Fabricantes
This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
Descripción
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
APEC (Fuding)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes