Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for low voltage and high current applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.
Descripción
PNP, Vceo=50V, Ic=150mA
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
The CPH3216 is a bipolar transistor, (-)50V, (-)1A, low saturation voltage, (PNP)NPN single CPH3 for DC-DC converter applications.
Descripción
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -60V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V Characteristic frequency (fT): 100MHz (100~250)
Descripción
SHIKUES (Shike)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
Infineon (Infineon)
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GOFORD (valley peak)
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Infineon (Infineon)
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SPTECH (Shenzhen Quality Super)
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SINO-IC (Coslight Core)
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Slkor (Sakor Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
VISHAY (Vishay)
Fabricantes
minos (Minos)
Fabricantes
NPN, Vceo=30V, Ic=3A
Descripción
PINGWEI (Pingwei)
Fabricantes