Triode/MOS tube/transistor/module

This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize the on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

NPN, Vceo=80V, Ic=1A, hfe=100~250

Triode Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 300mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE (sat)@Ic,Ib): 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 200@2mA, 5V Characteristic frequency (fT):

CSD25481F4 P-Channel NexFET Power MOSFET, CSD25481W4

NPN