Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
Fabricantes
TECH PUBLIC (Taizhou)
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HUAYI (Hua Yi Wei)
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UMW (Friends Taiwan Semiconductor)
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TECH PUBLIC (Taizhou)
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CBI (Creation Foundation)
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VBsemi (Wei Bi)
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WINSOK (Weishuo)
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Configuration Dual Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 6 VGS(th)(v) 1.6 RDS(ON)(m?)@4.296V 36 Qg(nC)@4.5V 7.5 QgS(nC) 3.24 Qgd(nC) 2.75 Ciss(pF) 815 Coss(pF) 95 Crss(pF) 60
Descripción
Doesshare (Dexin)
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DIODES (US and Taiwan)
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Dual NPN, Vceo=40V, Ic=200mA
Descripción
onsemi (Ansemi)
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Infineon (Infineon)
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Long-Tek (Long Xia)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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N-Channel, PowerTrench MOSFET, 60V, 110A, 1.8mΩ
Descripción
Agertech (Agertech)
Fabricantes
Agertech (Agertech)
Fabricantes
onsemi (Ansemi)
Fabricantes
The device includes two custom N-channel MOSFETs in a dual PQFN encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.
Descripción