Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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Littelfuse (American Littelfuse)
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onsemi (Ansemi)
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Samwin (Semipower)
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NIKO-SEM (Nickerson)
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LONTEN (Longteng Semiconductor)
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KY (Han Kyung Won)
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VISHAY (Vishay)
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XZT (Xinzhantong)
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VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 120A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 2.7mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 20nC@10V Input Capacitance (Ciss@Vds): 3nF@15V Operating Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
Descripción
SHIKUES (Shike)
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LRC (Leshan Radio)
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VBsemi (Wei Bi)
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N+P channel, 30V, 8A, 18mΩ@10V; -30V, -8A, 32mΩ@-10V
Descripción
VBsemi (Wei Bi)
Fabricantes