Triode/MOS tube/transistor/module
Infineon (Infineon)
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Infineon (Infineon)
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N-channel, 150V, 43A, 0.042mΩ@10V
Descripción
HUASHUO (Huashuo)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 72A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 44.5nC@0V Input Capacitance (Ciss@Vds): 2.413nF@25V , Vds=60V Id=72A Rds=4.5mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5*6;
Descripción
WEIDA (Weida)
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VBsemi (Wei Bi)
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Sinopower (large and medium)
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HGSEMI (Huaguan)
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Cmos (Guangdong Field Effect Semiconductor)
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TMC (Taiwan Mao)
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SHIKUES (Shike)
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TECH PUBLIC (Taizhou)
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MCC (Meiweike)
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UMW (Friends Taiwan Semiconductor)
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VBsemi (Wei Bi)
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P-channel, -30V, -5.6A, 46mΩ@-10V
Descripción
VBsemi (Wei Bi)
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SHIKUES (Shike)
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Infineon (Infineon)
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N-channel, 100V, 31A, 39mΩ@10V
Descripción
VBsemi (Wei Bi)
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