Triode/MOS tube/transistor/module

NPN, Vceo=40V, Ic=2A

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 50A Power (Pd): 68W On-Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,12A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 30.5nC@10V Input capacitance (Ciss@Vds): 1.09nF@50V, Vds=100V Id=50A Rds=12mΩ, operating temperature : -55℃~+150℃@(Tj);

This PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

DTC123JUA-F2-0000HF

This family of medium power PNP Darlington plastic transistors can be used as output devices in complementary general purpose amplifier applications.

PNP, Vceo=-45V, Ic=-0.1A, Silkscreen: M6, RANGE:300-400

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 4.4 VGS(th)(v) 0.85 RDS(ON)(m?)@4.23V 50 Qg(nC)@4.5V 6.4 QgS(nC) 0.54 Qgd(nC) 1.25 Ciss(pF) 382 Coss(pF) 41 Crss(pF) 33

N channel