Triode/MOS tube/transistor/module

P channel-30V-12A 11m

Field effect transistor (MOSFET) type: N-channel drain-source voltage (Vdss): 30V continuous drain current (Id): 316A power (Pd): 227W on-resistance (RDS(on)@Vgs,Id): 0.5mΩ @10V,50A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 142nC@10V Input Capacitance (Ciss@Vds): 8.01nF@15V, Vds=30V Id=316A Rds=0.5mΩ, working temperature: -55℃~+150℃@(Tj) DFN5*6;

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 40 VGS(th)(v) 0.85 RDS(ON)(m?)@4.190V 9.6 Qg(nC)@4.5V 16 QgS(nC) 2.8 Qgd(nC) 3.7 Ciss(pF) 1150 Coss(pF) 120 Crss(pF) 85

Darlington transistor

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NPN, 40V, 600mA

Dual NPN Pre-biased, 50V, 100mA

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 80A Power (Pd): 89W On-Resistance (RDS(on)@Vgs,Id): 6.6mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 3nF@30V, Vds=60V Id=80A Rds=6.6mΩ, operating temperature : -55℃~+150℃@(Tj)

This P-channel 2.5V specified MOSFET is produced using a proprietary high cell density trench MOSFET technology. This very high-density process is ideally suited to minimize on-resistance while providing excellent switching performance.

Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 3V@20mA, 0.3V Maximum input voltage (VI(off)@Ic /Io,Vce/Vcc): 300mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@50mA, 2.5mA DC current gain (hFE@Ic,Vce): 100@5mA, 10V