Triode/MOS tube/transistor/module
TOSHIBA (Toshiba)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P channel -30V -4A
Descripción
Convert Semiconductor
Fabricantes
Convert Semiconductor
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.7-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
minos (Minos)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
Descripción
GOODWORK (Good Work)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 600V, 6.7A, 650mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
P-channel, -20V, -3.6A, 35mΩ@-4.5V
Descripción
LRC (Leshan Radio)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.4-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 80
Descripción
VISHAY (Vishay)
Fabricantes
N-channel, 30V, 30A, 0.003Ω@10V
Descripción
PINGWEI (Pingwei)
Fabricantes