Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
N-channel, 650V, 20A, 0.18Ω@10V
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
APEC (Fuding)
Fabricantes
N groove 650V 4A
Descripción
Doesshare (Dexin)
Fabricantes
NMOS 30V 100mA RDS(on)=8Ω WITH ESD SOT-723
Descripción
onsemi (Ansemi)
Fabricantes
Agertech (Agertech)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA HFE: 300-400
Descripción
MOS (Field Effect Transistor)
Descripción
Wuxi Unisplendour
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
onsemi (Ansemi)
Fabricantes
Runxin (Runxin Micro)
Fabricantes
Field effect transistor MOSFET@@gallium nitride GaN power device: Vds: 900V Id: 23A Rds: 150mΩ Qg: 38nC Qrr: 26nC
Descripción
NPN transistor, HFE:100-250, 500mA Vce=30V
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=45V, Ic=2A
Descripción
JESTEK (JESTEK)
Fabricantes
Infineon (Infineon)
Fabricantes