Triode/MOS tube/transistor/module
LGE (Lu Guang)
Fabricantes
UMW (Friends Taiwan Semiconductor)
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onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
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HGSEMI (Huaguan)
Fabricantes
Seven-way high withstand voltage and high current Darlington drive circuit 50V 500mA
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
onsemi (Ansemi)
Fabricantes
This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
Descripción
ST (STMicroelectronics)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
N-channel, 40V, 9A, 16 milliohms,
Descripción
Potens (Bosheng Semiconductor)
Fabricantes
LGE (Lu Guang)
Fabricantes
CBI (Creation Foundation)
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Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor Transistor Field Effect Transistor MOS tube, SOP-8, N channel, withstand voltage: 30V, current: 13A, 10V internal resistance (Max): 0.0068Ω, 4.5V internal resistance (Max): 0.012Ω, power: 2W
Descripción
onsemi (Ansemi)
Fabricantes
Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
onsemi (Ansemi)
Fabricantes
These devices feature high current gain and low saturation voltage with up to 3 A of continuous collector current.
Descripción
TI (Texas Instruments)
Fabricantes