Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
N-channel, 100V
Descripción
NPN, Vceo=50V, Ic=3A, hfe=200~400
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
DIODES (US and Taiwan)
Fabricantes
P-channel, -20V, -4A, 42.5Ω@-4.5V
Descripción
onsemi (Ansemi)
Fabricantes
The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.
Descripción
TOSHIBA (Toshiba)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Wuxi Unisplendour
Fabricantes
onsemi (Ansemi)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes