Triode/MOS tube/transistor/module
Voltage VDSS650V, conduction resistance Rds0.54 ohms, charge Qg57nC, current ID16A
Descripción
Hottech (Heketai)
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HUXN (Huixin)
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SMD transistor Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 10W DC current gain (hFE@Ic,Vce): 160@1A,2V
Descripción
NPN Vceo=30V Ic=3A
Descripción
VBsemi (Wei Bi)
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NCE (Wuxi New Clean Energy)
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TOSHIBA (Toshiba)
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ST (STMicroelectronics)
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TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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YFW (You Feng Wei)
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WEIDA (Weida)
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HXY MOSFET (Huaxuanyang Electronics)
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SPTECH (Shenzhen Quality Super)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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