Triode/MOS tube/transistor/module

N-channel, 600V, 44A, 70mΩ@10V

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance and switching losses. Added G-S Zener to increase ESD voltage level.

NPN, Vceo=160V, Ic=0.6A

The MBT3904DW1 and MBT3904DW2 devices are spin-offs of our popular SOT-23/SOT-323 three-lead devices. This dual NPN bipolar transistor is suitable for general purpose amplifier applications and comes in a SOT-363 six-lead surface mount encapsulation. By putting two discrete devices into one encapsulation, these devices are suitable for low-power surface-mount applications where board space is at a premium.