Triode/MOS tube/transistor/module

N-channel 600V

N-channel, 80V, 30A, 0.017Ω@10V

PNP

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 110@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)100MHz Operating temperature+ 150℃@(Tj)