Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 560V, 3.2A
Descripción
MCC (Meiweike)
Fabricantes
onsemi (Ansemi)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
ST (STMicroelectronics)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 110 VGS(th)(v) 1.6 RDS(ON)(m?)@4.365V 4.3 Qg(nC)@4.5V 70 QgS(nC) 12 Qgd(nC) 17 Ciss(pF) 3500 Coss(pF) 386 Crss(pF) 358
Descripción
DIODES (US and Taiwan)
Fabricantes
PNP, 300V, 0.5A, SOT223
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
Polarity NPN Dissipated Power (W) 0.2 Maximum Collector Current (mA) 100 Collector- Base Voltage (V) 50 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 100/5 Maximum operating frequency (MHz) 100
Descripción
RENESAS (Renesas)/IDT
Fabricantes
NPN VCEO=3.3V IC=0.035A
Descripción
onsemi (Ansemi)
Fabricantes
N-channel, 500V, 22A, 260mΩ@10V
Descripción
ST (STMicroelectronics)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD17306Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 4.2mΩ
Descripción