Triode/MOS tube/transistor/module
Sinopower (large and medium)
Fabricantes
P-channel, -20V, -3A
Descripción
ST (STMicroelectronics)
Fabricantes
NPN, Vceo=100V, Ic=1A
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vcc=50V, Io=100mA, Pd=100mW
Descripción
ISC (Wuxi Solid Electric)
Fabricantes
China Resources Huajing
Fabricantes
Doesshare (Dexin)
Fabricantes
ST (STMicroelectronics)
Fabricantes
SPS (American source core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Drain-source voltage (Vdss): 30V Continuous drain current (Id): 46.5A Power (Pd): 23W On-resistance (RDS(on)@Vgs,Id): 7mΩ@10V,20A
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general power amplifier and switching applications. TIP41, TIP41A, TIP41B, TIP41C (NPN); and TIP42, TIP42A, TIP42B, TIP42C (PNP) are complementary devices.
Descripción
MOS (Field Effect Transistor)
Descripción
Samwin (Semipower)
Fabricantes