Triode/MOS tube/transistor/module
WPMtek (Wei Panwei)
Fabricantes
onsemi (Ansemi)
Fabricantes
The device is suitable for applications requiring very high current gain with collector currents up to 1.0 A. From Process 05.
Descripción
Slkor (Sakor Micro)
Fabricantes
Type P VDSS(V) -20 ID@TC=29?C(A) -4 PD@TC=29?C(W) 1.5 VGS(V) ±8 RDS(on)(m?)Max.@TC= 25?C VGS=4.9V 50
Descripción
NPN,Vceo=80V,Ic=500mA
Descripción
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
ST (STMicroelectronics)
Fabricantes
STANSON (Statson)
Fabricantes
Type N VDSS(V) 30 VGS(V) 12 VTH(V) 0.5 IDS37°C(A) 5.8 RDS(Max) 30 PD37°C(W) 1.25
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using an advanced PowerTrench process optimized for rDS(on), switching performance and robustness.
Descripción
LRC (Leshan Radio)
Fabricantes
TI (Texas Instruments)
Fabricantes
LM395 Ultra-Reliable Power Transistor
Descripción
LRC (Leshan Radio)
Fabricantes