Triode/MOS tube/transistor/module

NPN 250V 16A 200W

These dual N- and P-channel enhancement mode field effect transistors are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Motor drive module IGBT

This power MOSFET is suitable for withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages.

P-channel, -60V, -25A, 58mΩ@10V

N-type MOS tube VDS20V, ID90ARDS(on), Typ@VGS=10V1.5mR