Triode/MOS tube/transistor/module

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

bc850c transistor (2G)

Power MOSFET, 20 V, 285 mA, N-Channel, ESD Protected, SOT-723

NPN, Vceo=160V, Ic=600mA

This N-channel MOSFET is produced using the advanced PowerTrench process. Combining developments in both silicon and Dual Cool encapsulation technology, it offers the lowest rDS(on) due to extremely low junction-to-ambient thermal resistance while maintaining excellent switching performance.