Triode/MOS tube/transistor/module

YJQ10N02A-F1-1100HF

N-channel, 40V, 19A, 0.009Ω@10V

MOS, TO-263, N-channel, 400V, 10A, 450mΩ (Max), 125W

Silicon carbide MOS1200V17mΩ

N-channel, 100V, 131A, 0.0056Ω@10V

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.