Triode/MOS tube/transistor/module

Configuration Single+ESD Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 4.8 VGS(th)(v) 2 RDS(ON)(m?)@4.109V 100 Qg(nC)@ 4.5V - QgS(nC) 2.5 Qgd(nC) 3 Ciss(pF) 740 Coss(pF) 47 Crss(pF) 25

Power MOSFET, 40 V, 0.92 mΩ, 300 A, single N-channel

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 500mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic,Vce): 400@100mA, 1V Characteristic frequency (fT): 100MHz