Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 650V, 12A, 0.33Ω@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-150V, Ic=-600mA
Descripción
Ruichips (Ruijun Semiconductor)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VISHAY (Vishay)
Fabricantes
DIOTEC (Diotec)
Fabricantes
onsemi (Ansemi)
Fabricantes
This P-channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 20V).
Descripción
YANGJIE (Yang Jie)
Fabricantes
MMSTA42-F2-0000HF
Descripción
ST (STMicroelectronics)
Fabricantes
CBI (Creation Foundation)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LYG (Lingyan Pavilion)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
SPS (American source core)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 10/12 Continuous Drain Current ID (A) 10
Descripción