Triode/MOS tube/transistor/module
LRC (Leshan Radio)
Fabricantes
P channel -30V -4.1A
Descripción
Infineon (Infineon)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 600 Collector- Base Voltage (V) 180 Saturation Voltage Drop (V) 0.15 Collector/ Base Current (mA) 44835 Maximum Working Frequency (MHz) 100
Descripción
LRC (Leshan Radio)
Fabricantes
CBI (Creation Foundation)
Fabricantes
AnBon (AnBon)
Fabricantes
Infineon (Infineon)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
SILAN (Silan Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
P-channel, -20V, -2.3A, 112mΩ@-4.5V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes