Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, 40V, 19A, 5mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
LRC (Leshan Radio)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P-channel, -60V, -6.5A, 58mΩ@10V
Descripción
China Resources Huajing
Fabricantes
N-channel, 600V, 2A, 3.6Ω@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel 65V 30A
Descripción
N-channel, 20V, 4.2A, 45mΩ@4.5V
Descripción
Techcode (TED)
Fabricantes
Type N Drain-Source Voltage (Vdss) 80 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 3.6 Input Capacitance (Ciss) 3635 Reverse Transfer Capacitance Crss (pF) 91 Gate Charge (Qg) 74
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 30V 21A
Descripción
onsemi (Ansemi)
Fabricantes
Wuxi Unisplendour
Fabricantes
onsemi (Ansemi)
Fabricantes
VISHAY (Vishay)
Fabricantes
SILAN (Silan Micro)
Fabricantes