Triode/MOS tube/transistor/module

NPN

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -45V Collector current (Ic): -1A Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib ): 500mV@500mA, 50mA DC current gain (hFE@Ic, Vce): 63@150mA, 2V

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

Configuration Single Type N-Ch VDS(V) 150 VGS(V) 20 ID(A)Max. 17 VGS(th)(v) - RDS(ON)(m?)@4.400V 105 Qg(nC)@4.5V 25.1 QgS(nC) 6.8 Qgd(nC) 12.6 Ciss(pF) 2285 Coss(pF) 110 Crss(pF) 83