Triode/MOS tube/transistor/module
N-channel, 60V, 5A
Descripción
HUASHUO (Huashuo)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.
Descripción
Voltage VDSS700V, conduction resistance Rds0.72 ohms, charge Qg44nC, current ID10A
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
PINGWEI (Pingwei)
Fabricantes
VISHAY (Vishay)
Fabricantes
NPN, Vceo=60V, Ic=5A
Descripción
Doesshare (Dexin)
Fabricantes
NPN, 50V, 100mA
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
ISC (Wuxi Solid Electric)
Fabricantes
onsemi (Ansemi)
Fabricantes
The FSB50450BS is an advanced Motion SPM 5 module providing a fully featured, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive for built-in MOSFETs (FRFET technology) to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout and temperature monitoring. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open source MOSFET terminals are provided for each phase to support the widest range of control algorithms.
Descripción
DIODES (US and Taiwan)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.1/7.5 Continuous Drain Current ID (A) 80
Descripción
VBsemi (Wei Bi)
Fabricantes
N-channel, 200V, 25A, 56mΩ@10V
Descripción
Slkor (Sakor Micro)
Fabricantes
SILAN (Silan Micro)
Fabricantes