Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
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CJ (Jiangsu Changdian/Changjing)
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PNP, Vceo=-100V, Ic=-5A
Descripción
GOFORD (valley peak)
Fabricantes
P-channel, -40V, -5.3A, 85mΩ@-10V
Descripción
FOSAN (Fuxin)
Fabricantes
Field effect transistor (MOSFET) P channel VDSS:60V ID:3.5A N channel VDSS:60V ID:5A
Descripción
FUXINSEMI (Fuxin Senmei)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
Fabricantes
N-Channel, PowerTrench MOSFET, 100V, 300A, 2.0mΩ
Descripción
TI (Texas Instruments)
Fabricantes
30V, N-Channel NexFET MOSFET™, Single SON3x3, 4.7mΩ 8-VSONP -55 to 150
Descripción
LRC (Leshan Radio)
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NPN, Vceo=45V, Ic=500mA
Descripción
YFW (You Feng Wei)
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ElecSuper (Jingxin Micro)
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DIODES (US and Taiwan)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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NCE (Wuxi New Clean Energy)
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VISHAY (Vishay)
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VISHAY (Vishay)
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SHIKUES (Shike)
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