Triode/MOS tube/transistor/module

Drain-source voltage (V) -60 Continuous drain current (Id) (A) -1.7 Threshold voltage (V) -2.5 Power (W) 1 On-resistance 52V (Ω) 180 Input capacitance (pF) 531

N-channel, 600V, 12A, 320mΩ@10V

N-channel 100V 4.3A

P-channel, -20V, -820mA, 1.5Ω@-1.8V

NPN, Vceo=60V, Ic=10A

N-channel, 30V, 5.3A, 52mΩ@4.5V

This N-channel small-signal MOSFET is produced using ON Semiconductor's proprietary high-cell-density DMOS technology designed to minimize on-resistance while providing robust, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver up to 2A of pulsed current, especially for low voltage, low current applications.