Triode/MOS tube/transistor/module
HUAYI (Hua Yi Wei)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 900V, 5.1A
Descripción
ST (STMicroelectronics)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
TECH PUBLIC (Taizhou)
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Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: 2 N-channel, N-way: Drain-source voltage (Vdss): 60V Continuous drain current (Id): 6.5A On-resistance (RDS(on)@Vgs,Id): 30mΩ@10V, 34mΩ/@ 4.5V, threshold voltage (Vgs(th)@Id): 1.0V to 2.0V VDS=VGS,ID=250μA
Descripción
TOSHIBA (Toshiba)
Fabricantes
NPN, Vceo=20V, Ic=300mA, hfe=350~1200
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±12 Vth(V) 0.4-1.5 On-Resistance RDS(ON) (mΩ) 18/26 Continuous Drain Current ID (A) 5.8
Descripción
Hottech (Heketai)
Fabricantes
NPN, Vceo=80V, Ic=1A, hfe=100~250
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN/PNP, Vceo=160V, Ic=200mA; Vceo=-150V, Ic=-200mA
Descripción
VISHAY (Vishay)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 40V 10A
Descripción
SINO-IC (Coslight Core)
Fabricantes