Triode/MOS tube/transistor/module

Fairchild's NPT IGBT utilizes advanced NPT IGBT technology to provide optimum performance for low power inverter drive applications featuring low loss and short circuit robustness.

Power MOSFET, 40 V, 2.8 mΩ, 110 A, single N-channel

This N-channel MOSFET device is produced using Fairchild's advanced PowerTrench process, which is tailored to minimize on-state resistance while maintaining excellent switching performance.

The ECH8660 is a power MOSFET, -30V, -4.5A, 59mΩ, complementary dual ECH8, for general switching applications.

This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.