Triode/MOS tube/transistor/module
MICROCHIP (US Microchip)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
Infineon (Infineon)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
RENESAS (Renesas)/IDT
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
Low saturation voltage bipolar junction transistors (BJTs) are tiny surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Descripción
onsemi (Ansemi)
Fabricantes
This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.
Descripción
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar power transistor is suitable for general purpose amplifiers and switching circuits. Recommended for 5 to 20 W audio amplifiers using complementary symmetrical circuits.
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes