Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WILLSEMI (Will)
Fabricantes
N groove 60V 30A
Descripción
VBsemi (Wei Bi)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 60V, 0.3A, 5Ω@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
Infineon (Infineon)
Fabricantes
N and P channel, 30V/-30V, 12A/-12A
Descripción
Samwin (Semipower)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
Samwin (Semipower)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 50mA Power (Pd): 225mW DC current gain (hFE@Ic,Vce): 100@4mA,10V 100~200 NPN
Descripción