Triode/MOS tube/transistor/module

Power MOSFET, 40 V, 0.67 mΩ, 370 A, single N-channel

N-Channel General Purpose Amplifier This device is primarily intended for low-level audio, and general-purpose applications with high-impedance signal sources. From Process 52.

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Automotive power MOSFETs for compact and efficient designs with DPAK encapsulation and high thermal performance. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.