Triode/MOS tube/transistor/module
PNP, Vceo=-50V, Ic=-500mA
Descripción
CRMICRO (China Resources Micro)
Fabricantes
GOFORD (valley peak)
Fabricantes
CYSTECH (Quan Yuxin)
Fabricantes
-30V/-5.3A/P channel
Descripción
onsemi (Ansemi)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
Wuxi Unisplendour
Fabricantes
Wuxi Unisplendour
Fabricantes
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±10 Vth(V) 0.5-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 6.5
Descripción
DIODES (US and Taiwan)
Fabricantes
P-channel, -100V, -2.4A, 350mΩ@-10V
Descripción
Samwin (Semipower)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
2 N-channel, 30V, 10A, 31mΩ@4.5V
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
PNP, Vceo=-50V, Ic=-150mA, hfe=200~600
Descripción
Infineon (Infineon)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
P-channel, -20V, -0.66A, 520mΩ@-4.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
AGM-Semi (core control source)
Fabricantes