Triode/MOS tube/transistor/module

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Previously developed model TA75332.

This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Power MOSFET, 30 V, 38A, Single N-Channel, Ø8FL

CSD87588N Synchronous Buck NexFET Power Block II