Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
This is a 30 V N-channel power MOSFET.
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220F, N-channel, 650V, 5A, 3000mΩ (Max), 35W
Descripción
onsemi (Ansemi)
Fabricantes
This family of medium power PNP plastic transistors uses complementary or quasi-complementary circuits and is suitable for use as audio amplifiers and drivers.
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-45V, Ic=-0.1A
Descripción
Infineon (Infineon)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
onsemi (Ansemi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed for use with synchronous or conventional switching PWM controllers to improve overall efficiency and minimize switch node ringing in DC/DC converters. has been targeted for low gate charge, low r
Descripción
Sinopower (large and medium)
Fabricantes
Infineon (Infineon)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
JJW (Jiejiewei)
Fabricantes
Voltage VDSS650V, conduction resistance Rds0.28 milliohms, charge Qg19nC, current ID15A
Descripción
Voltage VDSS650V, conduction resistance Rds0.64 ohms, charge Qg42nC, current ID12A
Descripción
Voltage VDSS500V, conduction resistance Rds0.32 ohms, charge Qg33nC, current ID12A
Descripción