Triode/MOS tube/transistor/module
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 220 VGS(th)(v) 3 RDS(ON)(m?)@4.459V - Qg(nC)@4.5V - QgS(nC) 28 Qgd(nC) 65 Ciss(pF) 5710 Coss(pF) 1463 Crss(pF) 595
Descripción
N-channel, 100V, 15A
Descripción
TI (Texas Instruments)
Fabricantes
CSD17578Q3A 30 V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
N-channel 60V 120A
Descripción
Ultra high voltage MOS tube
Descripción
FOSAN (Fuxin)
Fabricantes
Magnification 120-240 150MA current
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
BORN (Born Semiconductor)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Sinopower (large and medium)
Fabricantes
CBI (Creation Foundation)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -19.8 VGS(th)(v) -1.8 RDS(ON)(m?)@4.252V 15 Qg( nC)@4.5V 8 QgS(nC) 2 Qgd(nC) 4 Ciss(pF) 750 Coss(pF) 140 Crss(pF) 102
Descripción
minos (Minos)
Fabricantes