Triode/MOS tube/transistor/module
N-channel, 30V, 6.9A, 27mΩ@10V
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: NPN Collector Emitter Breakdown Voltage (Vceo): 300V Collector Current (Ic): 300mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 250nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 200mV@20mA HFE: 100-200
Descripción
Infineon (Infineon)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
WILLSEMI (Will)
Fabricantes
ST (STMicroelectronics)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 55V, 75A, 6.5mΩ@10V
Descripción
N-channel, 20V, 6.5A, 22mΩ@4.5V
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
WEIDA (Weida)
Fabricantes
ST (STMicroelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 100V, 1.2A, 600mΩ@10V
Descripción
Littelfuse (American Littelfuse)
Fabricantes