Triode/MOS tube/transistor/module
SI (deep love)
Fabricantes
MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 38/50 Continuous Drain Current ID (A) 5.1
Descripción
SPS (American source core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
NPN Vceo=30V Ic=0.5A PC=0.15W
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
MATSUKI (pine wood)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -34 VGS(th)(v) -2 RDS(ON)(m?)@4.433V 38 Qg(nC) @4.5V - QgS(nC) 9.5 Qgd(nC) 14.5 Ciss(pF) 2480 Coss(pF) 268 Crss(pF) 126
Descripción
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 55V, 30A, 14mΩ@10V
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
Infineon (Infineon)
Fabricantes
P-channel, -100V, -14A, 200mΩ@-10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-40V, Ic=-600mA, Silkscreen: M2B
Descripción