Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.
Descripción
YFW (You Feng Wei)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 100V, 17A
Descripción
TOSHIBA (Toshiba)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
onsemi (Ansemi)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 40V, 40A, 0.005Ω@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
HUXN (Huixin)
Fabricantes
MOSFET type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 170mA Power (Pd): 200mW On-resistance (RDS(on)@Vgs,Id): 6Ω@10V,170mA
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Dual PNP, -60V, -600mA
Descripción
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJL3134KT-F1-0100HF
Descripción