Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
APEC (Fuding)
Fabricantes
N-channel, 60V, 3A, 90mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 500 VGS(V) 30 ID(A)Max. 20 VGS(th)(v) - RDS(ON)(m?)@4.506V - Qg(nC)@4.5V - QgS(nC) 15 Qgd(nC) 12 Ciss(pF) 2800 Coss(pF) 285 Crss(pF) 25
Descripción
UMW (Friends Taiwan Semiconductor)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
LRC (Leshan Radio)
Fabricantes
Double PNP, Vceo=-150V, Ic=-0.5A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJB70G10B-F2-0000HF
Descripción
onsemi (Ansemi)
Fabricantes
NPN, Vceo=50V, Ic=3A, hfe=140~280
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
NPN 115W 80V 7.5A Applications: Designed for switch and amplifier applications
Descripción
SPS (American source core)
Fabricantes
Ultra high voltage MOS tube
Descripción