Triode/MOS tube/transistor/module
AGM-Semi (core control source)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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TOSHIBA (Toshiba)
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DIODES (US and Taiwan)
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Slkor (Sakor Micro)
Fabricantes
Type NPN IC(A) 1 VCBO(V) 120 VCEO(V) 100 VEBO(V) 5 VCE(sat)(V) 0.6
Descripción
VISHAY (Vishay)
Fabricantes
SHIKUES (Shike)
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APM (Jonway Microelectronics)
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SINO-IC (Coslight Core)
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Infineon (Infineon)
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XINLUDA (Xinluda)
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Interfaces - Drivers, Receivers, Transceivers 7/0
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 5A Power (Pd): 3.1W On-Resistance (RDS(on)@Vgs,Id): 63mΩ @10V
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 1.6 RDS(ON)(m?)@4.364V 6.7 Qg(nC)@4.5V - QgS(nC) 3 Qgd(nC) 15 Ciss(pF) 2100 Coss(pF) 326 Crss(pF) 282
Descripción